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hexfet power mosfet notes through are on page 10 applications control mosfet of sync-buck converters used for notebook processor power control mosfet for isolated dc-dc converters in networking systems benefits very low r ds(on) at 4.5v v gs low gate charge fully characterized avalanche voltage and current 100% tested for r g lead-free (qualified up to 260c reflow) rohs compliant (halogen free) low thermal resistance large source lead for more reliable soldering absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ??? 2.9 r ??? 40 c/w c w a v max. 24 76 190 20 30 19 -55 to + 150 3.1 0.025 2.0 v dss r ds(on) max qg 30v 3.5m @v gs = 10v 20nc

form quantity IRFH7934PBF pqfn 5mm x 6mm tape and reel 4000 irfh7934trpbf base part number package type standard pack orderable part number pqfn 5x6 mm

IRFH7934PBF s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 0.021 ??? v/c r ds(on) static drain-to-source on-resistance ??? 2.9 3.5 ??? 4.2 5.1 v gs(th) gate threshold voltage 1.35 1.8 2.35 v v gs(th) gate threshold voltage coefficient ??? -6.5 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 110 ??? ??? s q g total gate charge ??? 20 30 q gs1 pre-vth gate-to-source charge ??? 4.8 ??? q gs2 post-vth gate-to-source charge ??? 2.5 ??? q gd gate-to-drain charge ??? 6.3 ??? q godr gate charge overdrive ??? 6.4 ??? see fig.17 & 18 q sw switch charge (q gs2 + q gd ) ??? 8.8 ??? q oss output charge ??? 15 ??? nc r g gate resistance ??? 1.7 3.1 t d(on) turn-on delay time ??? 12 ??? t r rise time ???16??? t d(off) turn-off delay time ??? 14 ??? t f fall time ??? 7.5 ??? c iss input capacitance ??? 3100 ??? c oss output capacitance ??? 623 ??? c rss reverse transfer capacitance ??? 241 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 20 30 ns q rr reverse recovery charge ??? 28 42 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) a 3.9 190 v ds = v gs , i d = 50 a ns pf nc na a conditions ??? ??? ??? ??? conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 24a v gs = 20v v gs = -20v mosfet symbol v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 19a see fig.15 max. 97 t j = 25c, i f = 19a, v dd = 15v di/dt = 325a/ s see fig.16 t j = 25c, i s = 19a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 4.5v, i d = 19a v gs = 4.5v typ. ??? r g =1.8 v ds = 15v, i d = 19a v ds = 24v, v gs = 0v, t j = 125c m v ds = 24v, v gs = 0v v ds = 15v ??? i d = 19a v gs = 0v v ds = 15v 19 ? = 1.0mhz

IRFH7934PBF fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c 2.7v vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.9v bottom 2.7v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 2.7v vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.9v bottom 2.7v 1.0 2.0 3.0 4.0 5.0 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 15v 60 s pulse width t j = 25c t j = 150c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 24a v gs = 10v

IRFH7934PBF fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 10203040506070 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 19a 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t a = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc

IRFH7934PBF fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 t j , ambient temperature (c) 0 5 10 15 20 25 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.8 1.2 1.6 2.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50 a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? . 0.00 1.0 .0 1.1 0.0011 1.0 0.0 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / / c 4 4 r 4 r 4

IRFH7934PBF fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 2.5a 3.7a bottom 19a 2 3 4 5 6 7 8 9 10 v gs , gate-to-source voltage (v) 0 2 4 6 8 10 12 14 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) t j = 25c t j = 125c i d = 24a

IRFH7934PBF d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17. gate charge test circuit fig 16. !"
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$%#$&#'( for n-channel hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period )

) + - + + + - - - ? !" # $ ? ! % &'&& ? # (( ? &'&& ) ! ' fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr
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IRFH7934PBF pqfn 5x6 option "e" package details pqfn part marking

marking code (per marking spec.) xxxx xywwx xxxxx international rectifier logo part number date code assembly site code (per scop 200-002) pin 1 identifier lot code (eng mode - min. last 4 digits of eati #) (prod mode - 4 digits spn code) top marking (laser) 6
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IRFH7934PBF * pqfn tape and reel

IRFH7934PBF

repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 0.535mh, r g = 25 , i as = 19a.
pulse width 400 s; duty cycle 2%. rthjc is guaranteed by design when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. ms l 2 ???? (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level cons umer ?? (per je dec jes d47f ??? guidelines ) ? qualification standards can be found at international rectifier?s web site http://www .irf.com/product-info/reliability ?? higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www .irf.com/whoto-call/salesrep/ ??? applicable version of jedec standard at the time of product release. ???? higher msl ratings may be available for the specific package types listed here. please contact your international rectifier sales representative for further information: http://www .irf.com/whoto-call/salesrep/

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. date comments 08/06/2013 ? updated the package outline drawing, on page 8. ? this drawing change is related to pcn hana-gtbf-gem 5x6 pqfn public. revision history

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